Light emitting diode with plated substrate and method for producing the same

ABSTRACT

The present invention discloses a light emitting diode having a mirror and a permanent substrate plated thereon. The present invention also discloses a method for producing such light emitting diode. The permanent substrate and the mirror are formed after both electrodes are completed. Accordingly, the epitaxial structure and the mirror will not be damaged, and brightness and heat dissipation of the light emitting device are improved.

BACKGROUND OF THE INVENTION

[0001] 1. Field of the Invention

[0002] The present invention relates to a light emitting diode, which particularly includes a permanent substrate plated beneath a mirror. The present invention also relates to a method for producing such high brightness light emitting diode.

[0003] 2. Related Prior Arts

[0004] Currently, light emitting diodes (LEDs) are one of the most important light sources. The conventional procedures for producing LEDs are primarily to epitaxy a layered light emitting structure with pn junction on a GaAs substrate. The wafer is then bonded to a transparent substrate or a substrate with a mirror at high temperature. For bonding to the transparent substrate, processing temperature above 500° C. is necessary, and therefore the epitaxial structure is easily damaged. Certainly, the bonding yields and heat dissipation for the high power LED applications are not satisfied. As for bonding to the substrate with a mirror, the processing temperature is usually above 300° C., which also destroys the mirror and reduces reflectivity thereof

[0005] R.O.C. Patent Application No. 477,079 disclosed a method for producing a semiconductor device having a permanent metal substrate formed by means of plating or sputtering. In this patent, at least one electrode is formed after the permanent metal substrate is completed. Therefore, damage and crack of the metal substrate and the epitaxial structure occur due to obvious difference between their coefficients of thermal expansion. Moreover, a metal substrate is temporarily deposited or plated on a semiconductor structure, and then removed after the permanent substrate is formed. In practice the epitaxial structure is also damaged during removal of the temporary metal substrate. In other words, it's difficult to form electrodes on opposite sides of an LED with a metal substrate.

[0006] Accordingly, it is desirable to provide an improved method for producing an LED with a plated substrate to mitigate and/or obviate the aforementioned problems.

SUMMARY OF THE INVENTION

[0007] The major object of the present invention is to provide a light emitting diode with a plated substrate and a method for producing the same, which performs high brightness and needs low cost.

[0008] Another object of the present invention is to provide a high brightness light emitting diode with good heat dissipation.

[0009] The method of the present invention primarily first provides a substrate with an LED epitaxial structure thereon. The LED epitaxial structure includes a second cladding layer, an active layer, a first cladding layer, a window, and a metal contact layer sequentially formed on the substrate. This substrate can be made from GaAs, sapphire or InP. The LED epitaxial structure is preferably made from II-VI or III-V compounds with direct-bandgap.

[0010] Next, the LED epitaxial structure is etched to expose the second cladding layer. A first electrode and a second electrode are then respectively formed on the metal contact layer and the exposed cladding layer. Between the LED epitaxial structure and the first electrode, a transparent conductive film can be further added to improve current spreading. After rapid thermal annealing is completed for ohmic contact of the electrodes, a temporary substrate is bonded to the LED epitaxial structure and the first electrode. Consequently, the substrate for epitaxing can be removed.

[0011] To enhance brightness of the light emitting device, a mirror is formed beneath the LED epitaxial structure by means of evaporation, sputtering or ion beam sputtering. The mirror can be a metal capable of forming high bandgap with the LED epitaxial structure, or a composite of a metal with low refractivity and an insulating layer with high refractivity. The insulating layer is adjacent to the LED epitaxial structure.

[0012] At last, a permanent substrate is plated beneath the mirror, and then the temporary substrate can be removed. Preferably, sawing streets of the wafer is retained without plating the substrate thereon.

[0013] According to the above procedures, the light emitting diode with the plated substrate is obtained and exhibits high brightness.

[0014] Other objects, advantages, and novel features of the invention will become more apparent from the following detailed description when taken in conjunction with the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

[0015] FIGS. 1-6 show the procedures for producing the light emitting diode of the present invention.

[0016]FIG. 7 shows the cross section of the second embodiment including a metal mirror.

[0017]FIG. 8 shows the cross section of the third embodiment, in which the permanent substrate is partially plated beneath the mirror.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0018] FIGS. 1-6 show the general procedures for producing the light emitting diode of the present invention. First, a GaAs substrate 19 with an LED epitaxial structure is provided. On the substrate 19, a second cladding layer 11, an active layer 12, a first cladding layer 13, a window 14, and a metal contact layer 15 are sequentially epitaxed. According to the size of dice and position of electrodes, the metal contact layer 15, the window 14, the first cladding layer 13, the active layer 12 and the upper portion of the second cladding layer 11 are partially etched to expose the second cladding layer 11, as shown in FIG. 1.

[0019] The LED epitaxial structure is made from II-VI or III-V compounds with direct-bandgap, for example, Ga_(x)Al_(y)In_(1-x-y)N, (Al_(x)Ga_(1-x))_(y)In_(1-y)P, In_(x)Ga_(1-x)As, and ZnS_(x)Se_(1-x); wherein 0≦x≦1, 0≦y≦1. In the preferred embodiment of the present invention, the active layer 12 is undoped (A1 _(x)Ga_(1-x))_(y)In_(1-y)P with quantum well structure, the first cladding layer 13 is p-(Al_(x)Ga_(1-x))_(y)In_(1-y)P or p-GaP, and the second cladding layer 11 is n-(Al_(x)Ga_(1-x))_(y)In_(1-y)P.

[0020] The first electrode 31 and the second electrode 32 are respectively formed on the metal contact layer 15 and the exposed second cladding layer 11. The metal contact layer 15 can be further etched to remain only the portion beneath the first electrode 31, so that the emitted light absorbed by the metal contact layer can be decreased.

[0021]FIG. 2 shows the cross section of the LED in accordance with the present invention, in which a glass substrate 29 is bonded to the epitaxial layer. The glass substrate 29 is previously coated with epoxy or wax, and then attached to the wafer at 70-150° C. As this bonding procedure is performed at a low temperature, damage to the chip is prevented. Consequently, the GaAs substrate 19 is useless and can be removed by etching, as shown in FIG. 3.

[0022] In order to further promote brightness of the LED, a mirror 25 is formed beneath the second cladding layer 11 by means of physical film deposition, as shown in FIG. 4. The mirror 25 in this embodiment is composed of a metal layer 251 with low refractivity and an insulating layer 252 with high refractivity. The metal layer 251 and the insulating layer 252 are respectively made from Al and Al₂O₃. In addition to Al/Al₂O₃, other composites such as Al/SiO₂, Al/MgF₂, Pt/Al₂O₃, Pt/SiO₂, Pt/MgF₂, Al/Al₂O₃, Al/SiO₂, Al/MgF₂, AU/Al₂O₃, Au/SiO₂, Au/MgF₂, Ag/Al₂O₃, Ag/SiO₂, Ag/MgF₂ can be applied, too. As shown in FIG. 4, the insulating layer 252 is adjacent to the LED epitaxial structure.

[0023] Next, the wafer with the mirror 25 is immersed in an electrolyte containing Cu⁺² to plate a copper substrate 21 beneath the metal layer 251 through a redox reaction. The copper substrate 21 is a permanent substrate and about 30 μm thick, as shown in FIG. 5. Optionally, a film of catalyst such as Pd, can be coated beneath the metal layer 251 to accelerate the reaction, that is electroless copper. In the present invention, the electrolyte is not restricted, and preferably not to corrode the semiconductor device, for example, copper cyanide. After completing the metal substrate, the glass substrate 29 can be easily removed at low temperature, and the high brightness LED of the present invention is obtained.

[0024] Furthermore, in order to meliorate current crowding effect and the opaque center of conventional LEDs, a transparent conductive film (not shown in drawings) such as an ITO film, can be added between the first electrode 31 and the metal contact layer 15.

[0025]FIG. 7 shows the cross section of the second embodiment, in which the composite mirror 25 is replaced with a silver mirror 26. Alternatively, other metals or alloys such as Pt, Au, Au/Zn, Au/Be, Au/Ge, Au/Ge/Ni, In, Sn, Al, Zn, Ge, Ni can be applied, too.

[0026]FIG. 8 shows the cross section of the third embodiment in accordance with the present invention. The substrate 21 is selectively plated beneath the mirror 26. That is, sawing streets for dicing are temporarily covered without plating copper thereon.

[0027] By plating the metal substrate, manufacture cost can be effectively reduced, and the production yield is promoted. Particularly, bonding at high temperature is not necessary, and reflectivity of the mirror can be reserved. For conventional procedures, the epitaxial structure is easily damaged during rapid thermal annealing due to difference between their coefficients of thermal expansion. In the present invention, the electrodes are completed before plating the metal substrate, which significantly prevents the above problem. Furthermore, the plated copper substrate also facilitates heat dissipation. 

What is claimed is:
 1. A method for producing a light emitting diode, which has a plated substrate with a mirror, comprising steps of: a) providing a substrate with an LED epitaxial structure including a second cladding layer, an active layer, a first cladding layer, a window and a metal contact layer sequentially formed on said substrate; b) etching a part of said LED epitaxial structure to expose said second cladding layer; c) forming a first electrode and a second electrode respectively on said metal contact layer and said exposed second cladding layer, and heating both said electrodes by rapid thermal annealing; d) bonding a temporary substrate to said LED epitaxial structure and said first electrode; e) removing said substrate provided in step a); f) forming a mirror beneath said LED epitaxial structure; g) plating a permanent substrate beneath said mirror; and h) removing said temporary substrate.
 2. The method as claimed in claim 1, wherein said substrate provided in step a) is a GaAs substrate, a sapphire substrate or an InP substrate.
 3. The method as claimed in claim 1, wherein said LED epitaxial structure is made from a material selected from the group consisting of Ga_(x)Al_(y)In_(1-y)N, (Al_(x)Ga_(1-x))_(y)In_(1-y)P, In_(x)Ga_(1-x)As, ZnS_(x)Se_(1-x); wherein 0≦x≦1, 0≦y≦1.
 4. The method as claimed in claim 1, wherein said metal contact layer is partially etched to retain a portion beneath said first electrode.
 5. The method as claimed in claim 1 further depositing a transparent conductive film between said first electrode and said metal contact layer.
 6. The method as claimed in claim 1, wherein said temporary substrate is a glass substrate.
 7. The method as claimed in claim 1, wherein said temporary substrate is bonded to said LED epitaxial structure with epoxy or wax.
 8. The method as claimed in claim 1, wherein said mirror is a metal capable of forming high bandgap with said LED epitaxial structure.
 9. The method as claimed in claim 8, wherein said mirror is made from a material selected from the group consisting of Ag, Pt, Pd, Au, Au/Zn, Au/Be, Au/Ge, Au/Ge/Ni, In, Sn, Al, Zn, Ge and Ni, or mixtures thereof.
 10. The method as claimed in claim 1, wherein said mirror is made from a composite of a metal with a low refractivity and an insulating layer with a high refractivity, and said insulating layer is adjacent to said LED epitaxial structure.
 11. The method as claimed in claim 10, wherein said composite is selected from the group consisting of Al/Al₂O₃, Al/SiO₂, Al/MgF₂, Pt/Al₂O₃, Pt/SiO₂, Pt/MgF₂, Al/Al₂O₃, Al/SiO₂, Al/MgF₂, Au/Al₂O₃, Au/SiO₂, Au/MgF₂, Ag/Al₂O₃, Ag/SiO₂ and Ag/MgF₂.
 12. The method as claimed in claim 1, wherein said permanent substrate is plated beneath said mirror other than predetermined saw streets.
 13. A light emitting diode having a plated substrate with a mirror, comprising: a permanent metal substrate; a mirror formed on said permanent metal substrate; an LED epitaxial structure formed on said mirror, and sequentially comprising a second cladding layer, an active layer, a first cladding layer, a window and a metal contact layer, wherein said second cladding layer is partially exposed; a first electrode formed on said metal contact layer; and a second electrode formed on said exposed second cladding layer.
 14. The light emitting diode as claimed in claim 13, wherein said LED epitaxial structure is made from a material selected from the group consisting of Ga_(x)Al_(y)In_(1-x-y)N, (Al_(x)Ga_(1-x))_(y)In_(1-y)P, In_(x)Ga_(1-x)As, ZnS_(x)Se_(1-x); wherein 0≦x≦1, 0≦y≦1.
 15. The light emitting diode as claimed in claim 13 further comprising a transparent conductive film between said first electrode and said metal contact layer.
 16. The light emitting diode as claimed in claim 13, wherein said mirror is a metal capable of forming high bandgap with said LED epitaxial structure.
 17. The light emitting diode as claimed in claim 16, wherein said is made from a material selected from the group consisting of Ag, Pt, Pd, Au, Au/Zn, Au/Be, Au/Ge, Au/Ge/Ni, In, Sn, Al, Zn, Ge and Ni, or mixtures thereof.
 18. The light emitting diode as claimed in claim 13, wherein said mirror is made from a composite of a metal with a low refractivity and an insulating layer with a high refractivity, and said insulating layer is adjacent to said LED epitaxial structure.
 19. The light emitting diode as claimed in claim 18, wherein said composite is selected from the group consisting of Al/Al₂O₃, Al/SiO₂, Al/MgF₂, Pt/Al₂O₃, Pt/SiO₂, Pt/MgF₂, Al/Al₂O₃, A1/SiO₂, A1/MgF₂, Au/Al₂O₃, Au/SiO₂, Au/MgF₂, Ag/Al₂O₃, Ag/SiO₂, Ag/MgF₂. 